3 . 1 0 . 2 5 6. 9 0. 25 5. 9 0. 25 2. 3 0. 15 1. 3 0. 25 0.203max 7.8 0. 2 0.25 0.06 features low cost glass passivated chip junction low forward voltage drop high current capability mechanical data ca s e : j e d e c smc , m o l d ed p l a s t i c t e r m i n a l s : s olde r able p er m i l - s t d - 2 0 2 , m e t h o d 2 0 8 polarity: color band denotes cathode w e i g h t : 0 . 0 07 o un c e s , 0 .21 g r a m s mounting position: any ratings at 25 a m b i e n t t e m p e r a t u r e u n l e s s o t h e r w i s e s p e c i f i e d. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. m u r s 410 m u r s 415 m u r s 420 m u r s 430 m u r s 4 4 0 m u r s 4 5 0 m u r s 460 units maximum recurrent peak reverse voltage v rrm 100 150 200 300 400 500 600 v max imum rms v oltage v rms 70 105 140 210 280 350 420 v max imum dc bloc king v oltage v dc 100 150 200 300 400 500 600 v maximum average forw ard rectified current @ t a = 7 5 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 4 . 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a = 1 25 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg 3. thermal resistance f rom junction to ambient. t he p l a s t i c m a t e r i al c a rr i e s u / l r e c og n i t ion 94 v - 0 note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. a 125.0 i r i fsm 1 0 0 . 0 a 1 0 . 0 maximum ratings and electrical characteristics mur s 405 - - - mur s 460 a surface mount rectifiers v o l t a g e r a n g e : 5 0 --- 60 0 v current: 4.0 a smc(do-214ab) easily cleaned with alcohol,isopropanol and s im ilar s olvents i f(av) 4.0 m u r s 4 0 5 - 55 ----- + 150 0.89 35 50 25 1 . 2 8 20 50 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. 50 - 55 ----- + 150 95 dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes instantaneous reverse current instantaneous forward current percentage of rated peak reverse voltage,% fi g. 5--forword derati ng curve junction capacitance,pf reverse voltage, volts ambient temperature, peak forword surge current amperes mur s 405 - - - mur s 460 fi g. 1 -- test ci rcui t di agram and reverse recovery ti me characteri sti c instantaneous forward voltage, volts fi g. 4 -- typi cal juncti on capaci tance z set time base for 10/20 ns/cm notes:1.rise time = 7ns max.input impedance =1m . 22pf. jjjj 2.rise time =10ns max.so urce impedance=50 . fi g. 2 -- typi cal forward characteri sti c fi g. 3 -- typi cal reverse characteri sti c 20 0.002 0.08 2.0 40 60 80 100 0.2 0.8 8.0 20 80 40 120 140 200180160 4.0 0.4 0.02 0.04 0.008 0.004 0 t j =150 ?? t j =100 ?? t j =25 ?? 0.1 1.0 10 100 00.40.8 1.2 1.6 2.0 2.4 t j =25 pulse width=300 diode semiconductor korea www.diode.kr
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